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| Shantou Huashan Electronic Devices Co.,Ltd. HC8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 T stg ----Storage Temperature.............................. -55~150 Tj----Juncttion Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................40V VCEO----Collector-Emitter Voltage.................................25V V EB O ----Emitter-Base Voltage....................................6V I C ----Collector Current.............................................1.5A 1EmitterE 2Collector C 3BaseB TO-92 ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions ICBO IEBO HFE VBE VCE(sat VBE(sat) BVCBO BVCEO BVEBO fT 85 40 0.1 0.1 500 1 0.5 1.2 A A 40 25 6 100 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100AIE=0 IC=2mAIB=0 IE=100AIC=0 VCE=10V, IC=50mA hFE Classification B C 120--200 D 160--300 E 270--500 85--160 Shantou Huashan Electronic Devices Co.,Ltd. HC8050 |
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